A mathematical model of conversion of GaAs substrate into thin GaNxAs1-x films obtained by nitridation of porous GaAs substrate
- Pages
- 40-48
Abstract
A mathematical model of conversion of GaAS substrate into thin GaNxAs1-x films obtained by nitridation of porous GaAs substrate are presented. The technologic conditions influence on GaNxAs1-x parameters are discussed. The comparative analysis of both experimental and theoretic data was applied for optimization nitridation conditions in order to obtain «soft» substrates for GaN growth. The results will help to decrease mechanical strains in GaN/GaAs semiconductors structures. For solving and analysis of the presented system of differential equation was used mathematical package for partial differential equation FlexPDE.
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