Bipolar resistive switching in memristive thin films based on Si-Ag :: IKBFU's united scientific journal editorial office

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There is only one science. Two sciences are impossible as two universes are
Alexander Herzen

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Bipolar resistive switching in memristive thin films based on Si-Ag

Author Shevyrtalov S., Koiva D., Goikhman A.
Pages 24-28
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Keywords resistive switching, memristor, atomic force microscopy, I-V characteristics.
Abstract (summary) In this work were investigated surface and electrophysical properties of multilayer thin film structures based on Si/Ag, grown by Ion-Plasma Deposition method. There were developed and optimized method of structure formation, which consist of silver clusters in silicon medium. Current-voltage curves were observed on prepared structures and demonstrate resistive switching behavior.
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