Bipolar resistive switching in memristive thin films based on Si-Ag
- Pages
- 24-28
Abstract
In this work were investigated surface and electrophysical properties of multilayer thin film structures based on Si/Ag, grown by Ion-Plasma Deposition method. There were developed and optimized method of structure formation, which consist of silver clusters in silicon medium. Current-voltage curves were observed on prepared structures and demonstrate resistive switching behavior.
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