Physics, mathematics, and technology

2014 Issue №4

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Bipolar resistive switching in memristive thin films based on Si-Ag



In this work were investigated surface and electrophysical properties of multilayer thin film structures based on Si/Ag, grown by Ion-Plasma Deposition method. There were developed and optimized method of structure formation, which consist of silver clusters in silicon medium. Current-voltage curves were observed on prepared structures and demonstrate resistive switching behavior.


1. Chua L. O. Memristor — the missing circuit element // IEEE Trans Circuit Theory 18. 1971. Р. 507—519.
2. Strukov D. B., Snider G. S., Stewart D. R., Williams R. S. The missing memristor found // Nature. 2008. Vol. 453. Р. 80—83.
3. Szot K. et al. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 // Nature Mater. 2006. Vol. 5. Р. 312—320.
4. Aono M. et al. Quantized conductance atomic switch // Nature. 2005. Vol. 433.Р. 47—50.
5. Strukov D. et al. The Missing Memristor Found // Nature. 2008. Vol. 453. Р.80—83.
6. Браун. Я. Физика и технология источников ионов. М., 1998.
7. Goikhman A., Sheludyakov S., Bogdanov E. Ion beam assisted deposition of novel thin film materials and coatings // Materials Science Forum. 2011. Vol. 674. Р. 195.
8. Gwyddion — Free SPM (AFM, SNOM/NSOM, STM, MFM) data analysis software. URL: (дата обращения: 07.02.2014).