Investigation of changes in the paramets of thin films structures during ion implantation
In this paper were investigated the change of parameters of structures of thin film during ion implantation. Thickness of thin films before and after ion implantation were investigated by X-ray reflectivity. Also, crystal structure, average crystallite size and lattice constant were investigated by X-ray diffraction. The possibility of using ion ...
The influence of implantation on the bright-ness of nitrogen-vacancy centers
... characterized by a single set of values of CSCO. The properties of the spin states change at the level anti-crossing (LAC). This change leads to an increase in the spin-lattice relaxation rate and to a change in the ODMR spectrum. The LAC can occur during implantation and thus influence the observed yield of NV- centers of a certain type. We assume that during cascade transitions between the states of some NV- centers obtained by implantation, an intense 13C NMR signal can be observed. It is important ...
Photoluminescence of the 15NV–-center created by implantation
... shown that under certain conditions in 15NV–-center it is possible to obtain a 100 % transfer of polarization from the electron spin to the spin of the 15N nucleus. We believe that these conditions can be satisfied for 15NV–-centers obtained by implantation.
1. Jelezko F., Gaebel T., Popa I. et al. Observation of coherent oscillation of a single nuclear spin and realization of a two-qubit conditional quantum gate. Phys. Rev. Lett. 93, 130501 (2004).
2. Acosta V. M. et al. Broadband magnetometry ...