A mathematical model of conversion of GaAs substrate into thin GaNxAs1-x films obtained by nitridation of porous GaAs substrate
A mathematical model of conversion of GaAS substrate into thin GaNxAs1-x films obtained by nitridation of porous GaAs substrate are presented. The technologic conditions influence on GaNxAs1-x parameters are discussed. The comparative analysis of both experimental and theoretic data was applied for optimization nitridation conditions in order ...
A development of the low power engine for work on a krypton
... Investigation of SPT performance and particularities of its operation with Kr and Kr/Xe mixtures // IEPC 2001-065, 27th International Electric Propulsion Conference. Pasadena, CA, 2001.
4. Kim V., Кozlov V., Sеmenov A., Shkarban I. Investigation of the Boron Nitride based Ceramics Sputtering Yield Under it’s Bombardment by Xe and Kr ions // IEPC-01-073 in the Proceedings of the 27th International Electric Propulsion Conference. Pasadena, CA, 2001.
5. Kurzyna J., Barral S., Daniłko D., Miedzik J. First ...